part number ne856m02 eiaj 1 registered number 2sc5336 package outline m02 symbols parameters and conditions units min typ max i cbo collector cutoff current at v cb = 10 v, i e = 0 a 1.0 i ebo emitter cutoff current at v eb = 1 v, i c = 0 a 1.0 h fe 2 dc current gain at v ce = 10 v, i c = 20 ma 50 120 250 f t gain bandwidth product at v ce = 10 v, i c = 20 ma ghz 6.5 c re 3 feed-back capacitance at v cb = 10 v, i e = 0, f = 1.0 mhz pf 0.5 0.8 |s 21e | 2 insertion power gain at v ce = 10 v, i c = 20 ma, f = 1 ghz db 12.0 nf 1 noise figure 1 at v ce = 10 v, i c = 7 ma, f = 1 ghz db 1.1 nf 2 noise figure 2 at v ce = 10 v, i c = 40 ma, f = 1 ghz db 1.8 3.0 ne856m02 npn epitaxial silicon transistor high frequency low distortion amplifier ? high collector current: 100 ma max ? new high gain power mini-mold package (sot-89 type) ? high output power at 1 db compression: 22 dbm typ at 1 ghz ? high ip 3 : 32 dbm typ at 1 ghz features outline dimensions (units in mm) package outline m02 description nec's ne856m02 is an npn silicon epitaxial bipolar transistor designed for medium power applications requiring high dy- namic range and low intermodulation distortion. this device offers excellent performance and reliability at low cost through nec's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. the ne856m02 is an excellent choice for low noise amplifiers in the vhf to uhf band and is suitable for catv and other telecommunication applications. electrical characteristics (t a = 25 c) notes: 1. electronic industrial association of japan. 2. pulsed measurement, pulse width 350 s, duty cycle 2 %. 3.the emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. pin connections e: emitter c: collector b: base california eastern laboratories bottom view 1.6 0.2 1.5 0.1 0.25 0.02 0.42 0.06 1.5 0.42 0.06 0.8 min 0.45 0.06 3.95 0.26 2.45 0.1 c eb e 4.5 0.1 3.0
ne856m02 absolute maximum ratings 1 (t a = 25 c) symbols parameters units ratings v cbo collector to base voltage v 20 v ceo collector to emitter voltage v 12 v ebo emitter to base voltage v 3.0 i c collector current ma 100 p t total power dissipation 2 w 1.2 t j junction temperature c 150 t stg storage temperature c -65 to +150 notes: 1. operation in excess of any one of these parameters may result in permanent damage. 2. device mounted on 0.7 mm x 16 cm 2 double-sided ceramic substrate (copper plating). typical performance curves (t a = 25 c) ambient temperature, t a ( c) collector to base voltage, v cb (v) feed-back capacitance, cre (pf) collector current, ic (ma) collector current, i c (ma) dc current gain, h fe total power dissipation, p t (w) total power dissipation vs. ambient temperature feed back capacitance vs. collector to base voltage insertion gain vs. collector current dc current gain vs. collector current insertion power gain, |s 21e | 2 (db) 2.0 1.0 0 50 100 150 free air r th (j-a) 312.5 cw ceramic substrate 16 cm x 0.7 mm 2 f = 1.0 mhz 5.0 3.0 2.0 1.0 0.5 0.8 135102030 v ce = 10 v 200 100 50 20 10 0.5 1 5 10 50 15 10 5 0 1 3 5 10 20 30 50 100 v ce = 10 v f = 1 ghz part number quantity packaging NE856M02-T1-AZ 1000 tape & reel ordering information
ne856m02 typical performance curves (t a = 25 c) collector current, ic (ma) frequency, f (ghz) insertion power gain, i s21e| 2 (db) maximum available gain, mag (db) collector current, ic (ma) collector current, i c (ma) noise figure, nf (db) gain bandwidth product, f t (ghz) gain band width product vs. collector current insertion gain and maximum gain vs. frequency intermodulation distortion vs. collector current noise figure vs. collector current intermodulation distortion, im 2 (dbc) v ce = 10 v f = 1 ghz 10 5 3 2 1 0.5 0.3 13510203050 20 10 0 0.2 0.4 0.6 0.8 1.0 1.4 2.0 v ce = 10 v ic = 20 ma mag |s 21e | 2 7 6 5 4 3 2 1 0 0.5 1 5 10 50 v ce = 10 v f = 1 ghz -80 -70 -60 -50 -40 -30 20 30 40 50 60 70 v ce = 10 v v o = 100 db v/50 ? rg = re 50 ? im f = 90 + 100 mhz { at 2 im f = 2 x 200 - 190 mhz 3 im3 im2
ne856m02 typical common emitter scattering parameters (t a = 25 c) ne856m02 v ce = 3 v, i c = 10 ma frequency s 11 s 21 s 12 s 22 k mag (ghz) mag ang mag ang mag ang mag ang (db) 0.100 0.626 -67.5 20.474 137.7 0.031 60.2 0.766 -36.6 0.26 28.2 0.200 0.535 -110.6 14.152 115.2 0.044 50.4 0.541 -52.5 0.47 25.1 0.400 0.479 -149.7 7.982 94.8 0.059 50.0 0.366 -63.4 0.77 21.3 0.600 0.465 -168.7 5.464 83.6 0.073 53.3 0.316 -68.4 0.94 18.7 0.800 0.461 178.6 4.146 75.2 0.089 55.6 0.306 -72.9 1.03 15.7 1.000 0.459 168.7 3.339 68.0 0.104 56.7 0.311 -77.1 1.08 13.3 1.200 0.458 160.4 2.800 61.5 0.121 56.9 0.323 -81.0 1.10 11.7 1.400 0.458 152.9 2.415 55.5 0.138 56.7 0.340 -84.8 1.11 10.5 1.600 0.457 146.0 2.127 49.9 0.155 55.8 0.358 -88.1 1.10 9.4 1.800 0.458 139.5 1.905 44.6 0.171 54.8 0.376 -91.4 1.10 8.6 2.000 0.457 133.2 1.728 39.5 0.188 53.5 0.394 -94.3 1.08 7.9 2.200 0.457 127.0 1.582 34.7 0.205 51.9 0.412 -97.1 1.07 7.2 2.400 0.458 121.2 1.464 30.2 0.222 50.2 0.428 -99.7 1.05 6.8 2.600 0.459 115.4 1.363 26.0 0.239 48.6 0.442 -102.2 1.04 6.3 2.800 0.460 109.7 1.278 21.9 0.256 46.6 0.455 -104.8 1.02 6.0 3.000 0.462 103.9 1.204 17.9 0.272 44.5 0.466 -107.4 1.01 5.7 0 j 10 j 25 j 50 j 100 -j 10 -j 25 -j 50 -j 100 s 22 3 ghz s 22 0.1 ghz s 11 3 ghz s 11 0.1 ghz 90? 270? 180? 225? 315? 135? 45? s 21 3 ghz s 21 0.1 ghz s 12 3 ghz s 12 0.1 ghz 0? note: 1. gain calculation: mag = maximum available gain msg = maximum stable gain mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , coordinates in ohms frequency in ghz v ce = 3 v, i c = 10 ma
ne856m02 typical common emitter scattering parameters (t a = 25 c) ne856m02 v ce = 5 v, i c = 20 ma frequency s 11 s 21 s 12 s 22 k mag (ghz) mag ang mag ang mag ang mag ang (db) 0.100 0.481 -88.5 28.679 129.0 0.023 57.9 0.664 -41.3 0.42 31.0 0.200 0.434 -130.1 17.703 108.4 0.031 56.9 0.445 -52.9 0.68 27.5 0.400 0.414 -162.4 9.494 91.4 0.048 62.0 0.311 -58.6 0.92 22.9 0.600 0.411 -178.1 6.428 81.9 0.066 64.1 0.280 -62.1 1.02 19.1 0.800 0.410 171.0 4.855 74.4 0.084 65.0 0.280 -66.4 1.05 16.2 1.000 0.410 162.2 3.900 67.9 0.101 64.4 0.290 -70.7 1.07 14.2 1.200 0.409 154.5 3.265 61.9 0.120 63.2 0.305 -74.9 1.07 12.7 1.400 0.409 147.5 2.810 56.3 0.137 61.8 0.323 -79.0 1.07 11.4 1.600 0.408 140.9 2.471 51.0 0.154 60.0 0.343 -82.5 1.07 10.4 1.800 0.407 134.6 2.208 45.9 0.172 58.2 0.362 -85.9 1.06 9.6 2.000 0.406 128.6 2.000 41.1 0.188 56.2 0.381 -88.8 1.05 8.9 2.200 0.406 122.7 1.829 36.4 0.205 54.1 0.399 -91.7 1.04 8.3 2.400 0.406 117.0 1.689 32.0 0.222 52.0 0.416 -94.4 1.03 7.8 2.600 0.406 111.4 1.571 27.7 0.238 49.8 0.431 -96.9 1.02 7.4 2.800 0.408 105.9 1.471 23.7 0.253 47.6 0.445 -99.4 1.01 7.1 3.000 0.409 100.4 1.384 19.7 0.268 45.3 0.457 -101.9 1.00 7.1 0 j 10 j 25 j 50 j 100 -j 10 -j 25 -j 50 -j 100 s 22 3 ghz s 22 0.1 ghz s 11 3 ghz s 11 0.1 ghz 90? 270? 180? 225? 315? 135? 45? s 21 3 ghz s 21 0.1 ghz s 12 3 ghz s 12 0.1 ghz 0? note: 1. gain calculation: mag = maximum available gain msg = maximum stable gain mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , coordinates in ohms frequency in ghz v ce = 5 v, i c = 20 ma
ne856m02 typical common emitter scattering parameters (t a = 25 c) ne856m02 v ce = 10 v, i c = 20 ma frequency s 11 s 21 s 12 s 22 k mag (ghz) mag ang mag ang mag ang mag ang (db) 0.100 0.508 -78.9 29.606 131.4 0.019 57.0 0.707 -34.0 0.43 32.0 0.200 0.425 -120.5 18.715 110.2 0.029 57.5 0.500 -42.7 0.65 28.1 0.400 0.384 -156.2 10.140 92.5 0.043 62.1 0.373 -45.9 0.91 23.7 0.600 0.376 -173.7 6.875 82.6 0.058 64.6 0.347 -48.9 1.01 20.0 0.800 0.374 174.4 5.192 75.0 0.074 65.4 0.346 -53.4 1.05 17.1 1.000 0.374 164.9 4.168 68.3 0.090 65.3 0.356 -58.2 1.07 15.0 1.200 0.375 156.8 3.481 62.2 0.106 64.5 0.370 -63.0 1.07 13.5 1.400 0.375 149.5 2.990 56.6 0.122 63.4 0.387 -67.7 1.07 12.3 1.600 0.375 142.7 2.620 51.2 0.137 61.9 0.406 -71.9 1.06 11.3 1.800 0.376 136.2 2.337 46.1 0.153 60.3 0.424 -75.9 1.05 10.4 2.000 0.377 130.1 2.109 41.2 0.168 58.6 0.443 -79.4 1.04 9.7 2.200 0.378 123.9 1.922 36.5 0.183 56.8 0.461 -82.9 1.03 9.2 2.400 0.380 118.2 1.770 32.1 0.198 54.8 0.478 -85.9 1.01 8.9 2.600 0.382 112.6 1.640 27.8 0.213 53.2 0.494 -88.8 0.99 8.9 2.800 0.385 107.0 1.531 23.7 0.227 51.1 0.508 -91.7 0.98 8.3 3.000 0.388 101.4 1.435 19.8 0.242 49.1 0.521 -94.5 0.97 7.7 0 j 10 j 25 j 50 j 100 -j 10 -j 25 -j 50 -j 100 s 22 3 ghz s 22 0.1 ghz s 11 3 ghz s 11 0.1 ghz 90? 270? 180? 225? 315? 135? 45? s 21 3 ghz s 21 0.1 ghz s 12 3 ghz s 12 0.1 ghz 0? note: 1. gain calculation: mag = maximum available gain msg = maximum stable gain mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , coordinates in ohms frequency in ghz v ce = 10 v, i c = 20 ma
ne856m02 typical common emitter scattering parameters (t a = 25 c) ne856m02 v ce = 10 v, i c = 50 ma frequency s 11 s 21 s 12 s 22 k mag (ghz) mag ang mag ang mag ang mag ang (db) 0 j 10 j 25 j 50 j 100 -j 10 -j 25 -j 50 -j 100 s 22 3 ghz s 22 0.1 ghz s 11 3 ghz s 11 0.1 ghz 90? 270? 180? 225? 315? 135? 45? s 21 3 ghz s 21 0.1 ghz s 12 3 ghz s 12 0.1 ghz 0? note: 1. gain calculation: mag = maximum available gain msg = maximum stable gain mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , 0.100 0.388 -113.0 35.396 119.8 0.015 64.1 0.569 -38.2 0.60 33.7 0.200 0.380 -147.3 20.013 102.2 0.023 66.1 0.399 -40.5 0.85 29.4 0.400 0.377 -172.1 10.398 88.1 0.040 70.5 0.325 -41.0 1.00 23.7 0.600 0.378 175.4 6.989 79.6 0.057 71.3 0.316 -44.8 1.05 19.5 0.800 0.379 166.1 5.262 72.7 0.075 71.0 0.324 -50.2 1.06 16.9 1.000 0.380 158.2 4.218 66.5 0.092 69.4 0.337 -55.9 1.07 15.1 1.200 0.381 151.2 3.521 60.7 0.109 67.8 0.354 -61.1 1.06 13.6 1.400 0.382 144.7 3.023 55.3 0.125 65.9 0.373 -66.2 1.06 12.4 1.600 0.381 138.5 2.650 50.1 0.141 64.0 0.393 -70.7 1.05 11.4 1.800 0.382 132.5 2.362 45.1 0.157 62.0 0.412 -74.9 1.04 10.6 2.000 0.383 126.8 2.132 40.2 0.173 59.9 0.432 -78.6 1.03 9.9 2.200 0.383 121.0 1.943 35.6 0.188 57.7 0.451 -82.1 1.01 9.4 2.400 0.385 115.6 1.789 31.2 0.203 55.6 0.468 -85.3 1.00 9.5 2.600 0.386 110.2 1.657 27.0 0.218 53.6 0.485 -88.3 0.98 8.8 2.800 0.389 104.8 1.547 22.9 0.232 51.3 0.500 -91.2 0.97 8.2 3.000 0.392 99.5 1.450 19.0 0.246 49.3 0.513 -94.0 0.96 7.7 exclusive north american agent for nec rf, microwave & optoelectronic semiconductors california eastern laboratories ? headquarters ? 4590 patrick henry drive ? santa clara, ca 95054-1817 ? (408) 988-3500 ? telex 34-6393 ? fax (408) 988-0279 internet: http://www.cel.com 11/14/2001 data subject to change without notice coordinates in ohms frequency in ghz v ce = 10 v, i c = 50 ma life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury. the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale.
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